✨ New Arrivals Just Dropped!Explore
HomeStore
Micron MT53E256M32D2FW-046 AATB Dram Mobile LPDDR4 8 Gbit 256M x 32bit 2.133 GHz Tfbga 200 Pins
Micron MT53E256M32D2FW-046 AATB Dram Mobile LPDDR4 8 Gbit 256M x 32bit 2.133 GHz Tfbga 200 Pins
MT53E256M32D2FW-046 AAT:B is a 4Gb mobile low-power DDR4 SDRAM with low VDDQ. It is a high-speed CMOS, dynamic random-access memory. This memory is internally configured with x16 I/O, 8-banks. Each of the x16's 536,870,912-bit banks are organized as 32,768 rows by 1024 columns by 16bits. It has directed per-bank refresh for concurrent bank operation and ease of command scheduling. This memory has on-chip temperature sensor to control self refresh rate. It has clock-stop capability.
- Operating voltage range is 1.10V (VDD2)/0.60V or 1.10V (VDDQ)
- 256Meg x 32 configuration, LPDDR4, 2die addressing, B design
- Packaging style is 200-ball TFBGA 10 x 14.5 x 1.1mm (�0.40 SMD)
- Cycle time is 468ps at RL = 36/40, partial-array self refresh (PASR)
- Operating temperature range is -40°C to +105°C, automotive qualified
- Clock rate is 2133MHz, data rate per pin is 4266Mb/s
- Ultra-low-voltage core and I/O power supplies
- 16n prefetch DDR architecture, 8 internal banks per channel for concurrent operation
- Single-data-rate CMD/ADR entry, bidirectional/differential data strobe per byte lane
- Programmable READ and WRITE latencies (RL/WL), selectable output drive strength (DS)
Other details
| Brand | MICRON |
| Part Number | MT53E256M32D2FW-046 AATB |
| Quantity | Each |
| Technical Data Sheet EN |  |
All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them. Image is for illustrative purposes only. Please refer to product description.
$140.24
Micron MT53E256M32D2FW-046 AATB Dram Mobile LPDDR4 8 Gbit 256M x 32bit 2.133 GHz Tfbga 200 Pins—
$140.24
Micron MT53E256M32D2FW-046 AATB Dram Mobile LPDDR4 8 Gbit 256M x 32bit 2.133 GHz Tfbga 200 Pins
MT53E256M32D2FW-046 AAT:B is a 4Gb mobile low-power DDR4 SDRAM with low VDDQ. It is a high-speed CMOS, dynamic random-access memory. This memory is internally configured with x16 I/O, 8-banks. Each of the x16's 536,870,912-bit banks are organized as 32,768 rows by 1024 columns by 16bits. It has directed per-bank refresh for concurrent bank operation and ease of command scheduling. This memory has on-chip temperature sensor to control self refresh rate. It has clock-stop capability.
- Operating voltage range is 1.10V (VDD2)/0.60V or 1.10V (VDDQ)
- 256Meg x 32 configuration, LPDDR4, 2die addressing, B design
- Packaging style is 200-ball TFBGA 10 x 14.5 x 1.1mm (�0.40 SMD)
- Cycle time is 468ps at RL = 36/40, partial-array self refresh (PASR)
- Operating temperature range is -40°C to +105°C, automotive qualified
- Clock rate is 2133MHz, data rate per pin is 4266Mb/s
- Ultra-low-voltage core and I/O power supplies
- 16n prefetch DDR architecture, 8 internal banks per channel for concurrent operation
- Single-data-rate CMD/ADR entry, bidirectional/differential data strobe per byte lane
- Programmable READ and WRITE latencies (RL/WL), selectable output drive strength (DS)
Other details
| Brand | MICRON |
| Part Number | MT53E256M32D2FW-046 AATB |
| Quantity | Each |
| Technical Data Sheet EN | |
All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them. Image is for illustrative purposes only. Please refer to product description.
Product Information
Product Information
Shipping & Returns
Shipping & Returns
Description
MT53E256M32D2FW-046 AAT:B is a 4Gb mobile low-power DDR4 SDRAM with low VDDQ. It is a high-speed CMOS, dynamic random-access memory. This memory is internally configured with x16 I/O, 8-banks. Each of the x16's 536,870,912-bit banks are organized as 32,768 rows by 1024 columns by 16bits. It has directed per-bank refresh for concurrent bank operation and ease of command scheduling. This memory has on-chip temperature sensor to control self refresh rate. It has clock-stop capability.
- Operating voltage range is 1.10V (VDD2)/0.60V or 1.10V (VDDQ)
- 256Meg x 32 configuration, LPDDR4, 2die addressing, B design
- Packaging style is 200-ball TFBGA 10 x 14.5 x 1.1mm (�0.40 SMD)
- Cycle time is 468ps at RL = 36/40, partial-array self refresh (PASR)
- Operating temperature range is -40°C to +105°C, automotive qualified
- Clock rate is 2133MHz, data rate per pin is 4266Mb/s
- Ultra-low-voltage core and I/O power supplies
- 16n prefetch DDR architecture, 8 internal banks per channel for concurrent operation
- Single-data-rate CMD/ADR entry, bidirectional/differential data strobe per byte lane
- Programmable READ and WRITE latencies (RL/WL), selectable output drive strength (DS)
Other details
| Brand | MICRON |
| Part Number | MT53E256M32D2FW-046 AATB |
| Quantity | Each |
| Technical Data Sheet EN | |
All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them. Image is for illustrative purposes only. Please refer to product description.
