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VISHAY SQS180ELNW-T1_GE3 Power MOSFET, N Channel, 80 V, 82 A, 0.0053 ohm, PowerPAK 1212-8SLW, Surface Mount
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VISHAY SQS180ELNW-T1_GE3 Power MOSFET, N Channel, 80 V, 82 A, 0.0053 ohm, PowerPAK 1212-8SLW, Surface Mount

VISHAY SQS180ELNW-T1_GE3 Power MOSFET, N Channel, 80 V, 82 A, 0.0053 ohm, PowerPAK 1212-8SLW, Surface Mount

Product details

Channel Type: N Channel
Drain Source Voltage Vds: 80V
Continuous Drain Current Id: 82A
Drain Source On State Resistance: 0.0053ohm
Transistor Case Style: PowerPAK 1212-8SLW
Transistor Mounting: Surface Mount
Rds(on) Test Voltage: 10V
Gate Source Threshold Voltage Max: 2.5V
Power Dissipation: 119W
No. of Pins: 8Pins
Operating Temperature Max: 175°C
Product Range: TrenchFET Series
Qualification: AEC-Q101
MSL: MSL 1 - Unlimited

Other details

Brand VISHAY
Part Number SQS180ELNW-T1_GE3
Quantity Each (Supplied on Cut Tape)
Technical Data Sheet EN Download technical document - datasheet - Tanotis India

All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them.
$2.36
VISHAY SQS180ELNW-T1_GE3 Power MOSFET, N Channel, 80 V, 82 A, 0.0053 ohm, PowerPAK 1212-8SLW, Surface Mount
$2.36

VISHAY SQS180ELNW-T1_GE3 Power MOSFET, N Channel, 80 V, 82 A, 0.0053 ohm, PowerPAK 1212-8SLW, Surface Mount

Product details

Channel Type: N Channel
Drain Source Voltage Vds: 80V
Continuous Drain Current Id: 82A
Drain Source On State Resistance: 0.0053ohm
Transistor Case Style: PowerPAK 1212-8SLW
Transistor Mounting: Surface Mount
Rds(on) Test Voltage: 10V
Gate Source Threshold Voltage Max: 2.5V
Power Dissipation: 119W
No. of Pins: 8Pins
Operating Temperature Max: 175°C
Product Range: TrenchFET Series
Qualification: AEC-Q101
MSL: MSL 1 - Unlimited

Other details

Brand VISHAY
Part Number SQS180ELNW-T1_GE3
Quantity Each (Supplied on Cut Tape)
Technical Data Sheet EN Download technical document - datasheet - Tanotis India

All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them.

Product Information

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Description

Product details

Channel Type: N Channel
Drain Source Voltage Vds: 80V
Continuous Drain Current Id: 82A
Drain Source On State Resistance: 0.0053ohm
Transistor Case Style: PowerPAK 1212-8SLW
Transistor Mounting: Surface Mount
Rds(on) Test Voltage: 10V
Gate Source Threshold Voltage Max: 2.5V
Power Dissipation: 119W
No. of Pins: 8Pins
Operating Temperature Max: 175°C
Product Range: TrenchFET Series
Qualification: AEC-Q101
MSL: MSL 1 - Unlimited

Other details

Brand VISHAY
Part Number SQS180ELNW-T1_GE3
Quantity Each (Supplied on Cut Tape)
Technical Data Sheet EN Download technical document - datasheet - Tanotis India

All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them.
VISHAY SQS180ELNW-T1_GE3 Power MOSFET, N Channel, 80 V, 82 A, 0.0053 ohm, PowerPAK 1212-8SLW, Surface Mount | Tanotis