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MULTICOMP 2N5322 Bipolar (BJT) Single Transistor, General Purpose, PNP, -75 V, 1 W, -2 A, 30 hFE
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MULTICOMP 2N5322 Bipolar (BJT) Single Transistor, General Purpose, PNP, -75 V, 1 W, -2 A, 30 hFE

MULTICOMP 2N5322 Bipolar (BJT) Single Transistor, General Purpose, PNP, -75 V, 1 W, -2 A, 30 hFE

The 2N5322 is a medium power Bipolar Transistor features high performance, low frequency devices typically with current ratings 1A up to 1W power dissipation. Designed for use in medium power amplifier and switching applications.
  • Silicon power switching transistor
  • Turn-on time of 100ns
  • Turn-off time of 1000ns
  • 175°C/W Junction-to-ambient thermal resistance
  • 17.5°C/W Junction to case resistance

Applications

Audio, Industrial

Product details

Power Dissipation Pd 1W
DC Collector Current -2A
Collector Emitter Voltage V(br)ceo -75V
Transition Frequency ft -
Operating Temperature Max 200°C
Transistor Polarity PNP
DC Current Gain hFE 30hFE
No. of Pins 3Pins
Product Range -
Automotive Qualification Standard -
Transistor Case Style TO-39
MSL -

Other details

Brand MULTICOMP
Part Number 2N5322
Quantity Each
Technical Data Sheet EN Download technical document - datasheet - Tanotis India

All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them. Image is for illustrative purposes only. Please refer to product description.

$0.70

Original: $2.33

-70%
MULTICOMP 2N5322 Bipolar (BJT) Single Transistor, General Purpose, PNP, -75 V, 1 W, -2 A, 30 hFE

$2.33

$0.70

MULTICOMP 2N5322 Bipolar (BJT) Single Transistor, General Purpose, PNP, -75 V, 1 W, -2 A, 30 hFE

The 2N5322 is a medium power Bipolar Transistor features high performance, low frequency devices typically with current ratings 1A up to 1W power dissipation. Designed for use in medium power amplifier and switching applications.
  • Silicon power switching transistor
  • Turn-on time of 100ns
  • Turn-off time of 1000ns
  • 175°C/W Junction-to-ambient thermal resistance
  • 17.5°C/W Junction to case resistance

Applications

Audio, Industrial

Product details

Power Dissipation Pd 1W
DC Collector Current -2A
Collector Emitter Voltage V(br)ceo -75V
Transition Frequency ft -
Operating Temperature Max 200°C
Transistor Polarity PNP
DC Current Gain hFE 30hFE
No. of Pins 3Pins
Product Range -
Automotive Qualification Standard -
Transistor Case Style TO-39
MSL -

Other details

Brand MULTICOMP
Part Number 2N5322
Quantity Each
Technical Data Sheet EN Download technical document - datasheet - Tanotis India

All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them. Image is for illustrative purposes only. Please refer to product description.

Product Information

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Description

The 2N5322 is a medium power Bipolar Transistor features high performance, low frequency devices typically with current ratings 1A up to 1W power dissipation. Designed for use in medium power amplifier and switching applications.
  • Silicon power switching transistor
  • Turn-on time of 100ns
  • Turn-off time of 1000ns
  • 175°C/W Junction-to-ambient thermal resistance
  • 17.5°C/W Junction to case resistance

Applications

Audio, Industrial

Product details

Power Dissipation Pd 1W
DC Collector Current -2A
Collector Emitter Voltage V(br)ceo -75V
Transition Frequency ft -
Operating Temperature Max 200°C
Transistor Polarity PNP
DC Current Gain hFE 30hFE
No. of Pins 3Pins
Product Range -
Automotive Qualification Standard -
Transistor Case Style TO-39
MSL -

Other details

Brand MULTICOMP
Part Number 2N5322
Quantity Each
Technical Data Sheet EN Download technical document - datasheet - Tanotis India

All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them. Image is for illustrative purposes only. Please refer to product description.

MULTICOMP 2N5322 Bipolar (BJT) Single Transistor, General Purpose, PNP, -75 V, 1 W, -2 A, 30 hFE | Tanotis