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Infineon IPP200N15N3GXKSA1 Mosfet Transistor N Channel 50 A 150 V 0.016 ohm 10 3
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Infineon IPP200N15N3GXKSA1 Mosfet Transistor N Channel 50 A 150 V 0.016 ohm 10 3

Infineon IPP200N15N3GXKSA1 Mosfet Transistor N Channel 50 A 150 V 0.016 ohm 10 3

The IPP200N15N3 G is a 150V N-channel Power MOSFET that achieves a reduction in RDS (on) of 40% and of 45% in Figure of Merit (FOM). The OptiMOSÖ MOSFET offers high system efficiency and industry's lowest RDS (on) within the voltage classes. It is ideally suited for high frequency switching applications and optimized technology for DC-DC converters.
  • Excellent switching performance
  • Environmentally-friendly
  • Increased efficiency
  • Highest power density
  • Less paralleling required
  • Smallest board-space consumption
  • Easy to design
Applications

Power Management, Motor Drive & Control, Industrial, Audio

Other details

Brand INFINEON
Part Number IPP200N15N3GXKSA1
Quantity Each
Technical Data Sheet EN Download technical document - datasheet - Tanotis India
Product Change Notice EN Download technical document - datasheet - Tanotis India
  Simulation Model EN Download technical document - datasheet - Tanotis India

All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them. Image is for illustrative purposes only. Please refer to product description.


All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them.
$4.84
Infineon IPP200N15N3GXKSA1 Mosfet Transistor N Channel 50 A 150 V 0.016 ohm 10 3
$4.84

Infineon IPP200N15N3GXKSA1 Mosfet Transistor N Channel 50 A 150 V 0.016 ohm 10 3

The IPP200N15N3 G is a 150V N-channel Power MOSFET that achieves a reduction in RDS (on) of 40% and of 45% in Figure of Merit (FOM). The OptiMOSÖ MOSFET offers high system efficiency and industry's lowest RDS (on) within the voltage classes. It is ideally suited for high frequency switching applications and optimized technology for DC-DC converters.
  • Excellent switching performance
  • Environmentally-friendly
  • Increased efficiency
  • Highest power density
  • Less paralleling required
  • Smallest board-space consumption
  • Easy to design
Applications

Power Management, Motor Drive & Control, Industrial, Audio

Other details

Brand INFINEON
Part Number IPP200N15N3GXKSA1
Quantity Each
Technical Data Sheet EN Download technical document - datasheet - Tanotis India
Product Change Notice EN Download technical document - datasheet - Tanotis India
  Simulation Model EN Download technical document - datasheet - Tanotis India

All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them. Image is for illustrative purposes only. Please refer to product description.


All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them.

Product Information

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Description

The IPP200N15N3 G is a 150V N-channel Power MOSFET that achieves a reduction in RDS (on) of 40% and of 45% in Figure of Merit (FOM). The OptiMOSÖ MOSFET offers high system efficiency and industry's lowest RDS (on) within the voltage classes. It is ideally suited for high frequency switching applications and optimized technology for DC-DC converters.
  • Excellent switching performance
  • Environmentally-friendly
  • Increased efficiency
  • Highest power density
  • Less paralleling required
  • Smallest board-space consumption
  • Easy to design
Applications

Power Management, Motor Drive & Control, Industrial, Audio

Other details

Brand INFINEON
Part Number IPP200N15N3GXKSA1
Quantity Each
Technical Data Sheet EN Download technical document - datasheet - Tanotis India
Product Change Notice EN Download technical document - datasheet - Tanotis India
  Simulation Model EN Download technical document - datasheet - Tanotis India

All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them. Image is for illustrative purposes only. Please refer to product description.


All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them.
Infineon IPP200N15N3GXKSA1 Mosfet Transistor N Channel 50 A 150 V 0.016 ohm 10 3 | Tanotis