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INFINEON FF2MR12KM1HPHPSA1 Silicon Carbide MOSFET, Half Bridge, Dual N Channel, 350 A, 1.2 kV, 0.00196 ohm, Module

INFINEON FF2MR12KM1HPHPSA1 Silicon Carbide MOSFET, Half Bridge, Dual N Channel, 350 A, 1.2 kV, 0.00196 ohm, Module

INFINEON FF2MR12KM1HPHPSA1 Silicon Carbide MOSFET, Half Bridge, Dual N Channel, 350 A, 1.2 kV, 0.00196 ohm, Module

Product details

Technical Specifications

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MOSFET Module Configuration

Half Bridge

Continuous Drain Current Id

350A

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Drain Source On State Resistance

0.00196ohm

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No. of Pins

7Pins

Gate Source Threshold Voltage Max

5.15V

Operating Temperature Max

175°C

SVHC

No SVHC (21-Jan-2025)

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Channel Type

Dual N Channel

Drain Source Voltage Vds

1.2kV

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Transistor Case Style

Module

Rds(on) Test Voltage

18V

Power Dissipation

-

Product Range

62mm C Series

Other details

Brand	INFINEON
Part Number	FF2MR12KM1HPHPSA1
Quantity	Each
Technical Data Sheet EN

All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them.

$636.70

INFINEON FF2MR12KM1HPHPSA1 Silicon Carbide MOSFET, Half Bridge, Dual N Channel, 350 A, 1.2 kV, 0.00196 ohm, Module—

$636.70

INFINEON FF2MR12KM1HPHPSA1 Silicon Carbide MOSFET, Half Bridge, Dual N Channel, 350 A, 1.2 kV, 0.00196 ohm, Module

Product details

Technical Specifications

Find similar products

MOSFET Module Configuration

Half Bridge

Continuous Drain Current Id

350A

Open menu

Drain Source On State Resistance

0.00196ohm

Open menu

No. of Pins

7Pins

Gate Source Threshold Voltage Max

5.15V

Operating Temperature Max

175°C

SVHC

No SVHC (21-Jan-2025)

Find similar products

Channel Type

Dual N Channel

Drain Source Voltage Vds

1.2kV

Open menu

Transistor Case Style

Module

Rds(on) Test Voltage

18V

Power Dissipation

-

Product Range

62mm C Series

Other details

Brand	INFINEON
Part Number	FF2MR12KM1HPHPSA1
Quantity	Each
Technical Data Sheet EN

All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them.

Product Information

Shipping & Returns

Description

Product details

Technical Specifications

Find similar products

MOSFET Module Configuration

Half Bridge

Continuous Drain Current Id

350A

Open menu

Drain Source On State Resistance

0.00196ohm

Open menu

No. of Pins

7Pins

Gate Source Threshold Voltage Max

5.15V

Operating Temperature Max

175°C

SVHC

No SVHC (21-Jan-2025)

Find similar products

Channel Type

Dual N Channel

Drain Source Voltage Vds

1.2kV

Open menu

Transistor Case Style

Module

Rds(on) Test Voltage

18V

Power Dissipation

-

Product Range

62mm C Series

Other details

Brand	INFINEON
Part Number	FF2MR12KM1HPHPSA1
Quantity	Each
Technical Data Sheet EN

All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them.

INFINEON FF2MR12KM1HPHPSA1 Silicon Carbide MOSFET, Half Bridge, Dual N Channel, 350 A, 1.2 kV, 0.00196 ohm, Module | Tanotis